PART |
Description |
Maker |
HY57V641620ELTP-5 HY57V641620ELTP-6 HY57V641620ELT |
SDRAM - 64Mb 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
|
Hynix Semiconductor
|
M484M1644 |
64Mb SDRAM
|
eorex
|
HY5V62CF-S HY5V62CF-7 HY5V62CF |
SDRAM - 64Mb 4 BANKS X 512K X 32BIT SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
V43658Y04VATG-75 |
64MB 168-PIN 133 MHZ SDRAM UNBUFFERED SODIMM 3.3 VOLT, 8M x 64
|
Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
HYM71V8635BT6 HYM71V8635BT6-H |
8Mx64|3.3V|K/H|x4|SDR SDRAM - Unbuffered DIMM 64MB 8M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
HYM71V8M655HCT6 |
8Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 64MB 8Mx64 | 3.3 | 8/P/S | x4 | SDRAM的特别提款权-4MB的内
|
Daesan Electronics, Corp.
|
Z2647 Z2633 Z2617 Z2615 Z2630 Z2618 Z2620 Z2645 Z2 |
128MB DDR SDRAM SODIMM TRANSFORMER 18VA 2X 18V TRANSFORMER 10VA 2X 12V TRANSFORMER 10VA 2X 6V TRANSFORMER 18VA 2X 9V TRANSFORMER 10VA 2X 15V 64MB SDRAM SODIMM TRANSFORMER 30VA 2X 15V
|
|
TC7PAU04FU07 TC7PAU04FU |
Dual Inverter (unbuffer) with 3.6 V Tolerant Input
|
Toshiba Corporation Toshiba Semiconductor
|
MD5764802 MSM5718C50_MD5764802 MSM5764802 MSM5718C |
64Mb(8Mx8) concurrent RDRAM From old datasheet system (MSM5718C50 / MSM5764802) 18Mb (2M x 9) & 64Mb (8M x 8) Concurrent RDRAM 18Mb(2Mx9) concurrent RDRAM
|
OKI[OKI electronic componets] OKI electronic components
|
TC7SAU04F TC7SAU04FU |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic Inverter (unbuffer) with 3.6 V Tolerant Input
|
Toshiba Semiconductor
|
KIC7SU04FU |
Inverter Gate (Unbuffer) SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(INVERTER)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|